savantic semiconductor product specification silicon pnp power transistors 2SA1758 d escription with to-220fa package low collector saturation voltage wide area of safe operation applications for power switching applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -5 v i c collector current -12 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1758 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma ,i b =0 -60 v v (br)ebo emitter- base breakdown voltage i e =-50a ,i c =0 -5 v v cesat-1 collector-emitter saturation voltage i c =-6a; i b =-0.3a -0.3 v v cesat-2 collector-emitter saturation voltage i c =-8a; i b =-0.4a -0.5 v v besat-1 base-emitter saturation voltage i c =-6a; i b =-0.3a -1.2 v v besat-2 base-emitter saturation voltage i c =-8a; i b =-0.4a -1.5 v i cbo collector cut-off current v cb =-100v; i e =0 -10 a i ebo emitter cut-off current v eb =-5v; i c =0 -10 a h fe dc current gain i c =-2a ; v ce =-2v 60 320 f t transition frequency i c =-1a ; v ce =-10v 90 mhz h fe classifications d e f 60-120 100-200 160-320
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1758 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
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